Research Building
Technology in the Research Building

TECHNOLOGY IN THE RESEARCH BUILDING

PHOTOLITHOGRAPHY FOR SILICON AND GERMANIUM

  • The clean room is certified according to ISO5 / clean room class 100 in the handling area and ISO6 / clean room class 1000 in the corridors.
  • UV contact and proximity exposure units for round wafers (silicon and germanium) up to 100 mm diameter. Mask size 150*150 mm2 square, minimum line width 900 nm (SÜSS MA 150)
  • UV manual exposure for fragments and small wafers
  • Spin coater with heating plate for round wafers up to 200 mm diameter. Heating up to 200°C (SÜSS DELTA 80/8)
  • Drying oven for vapour deposition on adhesion promoters
  • Wet benches for ultrasonic development and  resist removal
  • Refrigerators for resist chemistry
  • Plasma Asher for round wafers up to 100 mm diameter, for removing resist residues in O2 plasma (TEPLA 100)

PHOTOLITHOGRAPHY FOR ALL OTHER MATERIALS

  • The clean room is certified according to ISO5 / clean room class 100 in the handling area and ISO6 / clean room class 1000 in the corridors.
  • UV contact and proximity exposure units for round wafers (compound semiconductors) up to 100 mm diameter. Mask size 150*150 mm^2 square, minimum line width 700 nm (SUSS MA6)
  • Spin coater with heating plate for round wafers up to 100 mm diameter. Heating up to 200°C
  • Wet benches for development and resist removal 

ELECTRON BEAM LITHOGRAPHY

  • Jeol JSM-5900 SEM
  • E-Beam writing with Raith Elphy plus
  • SEM resolution limit ~10 nm
  • Interferometrically controlled sliding table for wafers


VERTICAL FURNACE SYSTEM

Vertical furnace system for wet and dry oxidation of silicon up to 150 mm diameter, up to 1100 °C (CENTROTHERM VERTICOO 200)

Verticoo 200 vertical furnace system from Centrotherm, oxidation tube, vertical, oxidation dry and moist, moist oxidation with steamer (steam from DI water) or hydrox burner (steam from H2 and O2 burned). Disc size 150 mm and 200 mm, with adapters also 100 mm and "pieces", full handling system, but also manually operable. All oxidation tubes are equipped with a DCE bubbler.

HORIZONTAL CLUSTER SYSTEM

Horizontal cluster system for silicon up to 200 mm diameter, also solar: (CENTROTHERM EUROPE 2000)

  • Top: SiC tube up to 1285 °C, dry and moist oxidation, moist oxidation with steamer (steam from DI water) or hydrox burner (steam from H2 and O2 burnt).
  • Below: Polysilicon tube, doped and undoped, amorphous and polycrystalline, n and p doped with phosphine and diborane and with oxygen as SIPOS.
  • Below: Nitride tube, stoichiometric (Si3N4) and Si-rich nitride with low stresses, i.e. "low-stress nitrides" can be produced (compressive and tensil layer stress).
  • Below: LPCVD-TEOS tube, low-temperature oxides, with plasma support, temperatures from 450 °C.

All tubes designed for 200 mm, boats for rectangular solar wafers, round 150 mm and 100 mm as well as 2" and 3" available. All oxidation tubes are equipped with a DCE bubbler to enable high temperature cleaning with chlorine. This achieves good freedom from metal ions.


POLYIAMID OVEN

Up to 100 mm diameter, tempering under Ar, N2 or in fine vacuum, up to 950 °C, recipe-controlled.

PLASMA CVD

Plasma-CVD for round wafers up to 100 mm diameter, production of oxides, nitrides, poly and germanium, substrate temperature up to 400 °C (OXFORD PLASMALAB 90)


SPUTTERING SYSTEM

Cathode sputtering system for round wafers up to 200 mm diameter, DC and AC voltage, co-sputtering of two targets possible, plasma etching, magnetron system (LEYBOLD Z590)

HIGH VACUUM COATING UNIT

High vacuum coating unit for round wafers up to 100 mm diameter, 4-fold crucible and single crucible, co-evaporation (BALZERS BAK 610)


RAPID THERMAL PROCESSING

Rapid thermal processing at normal pressure, for round wafers up to 150 mm diameter, also solar, tempering up to 1100 °C under Ar, O2, N2 or N2H2. (AST SHS 2000 and self-made)

ION IMPLANTER

Ion implanter for round wafers up to 300 mm diameter, also Solar, As, P, B, 5-60 keV (VARIAN VIISta HC)


WET BENCHES

Wet benches for wet-chemical structuring and cleaning of round wafers up to 200 mm diameter (also solar)

  • RCA cleaning (SC1, SC2, HF-Dip)
  • Quick dump rinser
  • Spin rinser dryer
  • Wet chemical etching processes in general

REACTIVE ION ETCHING (RIE)

Reactive ion etching for round wafers up to 100 mm diameter, etching under Ar, O2, SF6 and CHF3 (ALCATEL RIE)

CONFOCAL MICROSCOPE

Confocal microscope with Mirau interferometer, up to 1500x magnification, height resolution up to 1 nm (LEICA DCM 3D)

SPECTRAL ELLIPSOMETER

Spectral ellipsometer for round wafers up to 200 mm diameter (also solar), 250-800 nm wavelength, stage for automated mapping of the surface (SENTECH SE 800)

WAFER PROBE STATION

Wafer probe station for round wafers up to 200 mm diameter (also solar), -65 °C to +200 °C sample temperature, digital camera system, 4 measuring needles (CASCADE SUMMIT 11000). With Impedance Analyzer (Agilent 4294A) and Semiconductor Parameter Analyzer (HP 4155).

FOUR-POINT MEASURING STATION

Four-point measuring station for measuring the layer resistance of a wafer (max. 200 mm diameter, all shapes) according to the measuring principle of four-point measurement. It can be measured manually at selected points on the wafer, or automatically according to a defined pattern and distance.

TRANSMISSION ELECTRON MICROSCOPE (TEM)

The TEM in the LNQE has an acceleration voltage of 200 kV and as an electron emitter a field effect cathode. The most important parameters are:

  • Device type: TEM Tecnai G2 F20 TMP from FEI
  • 200 kV Field effect FEG
  • OBJECTIVE LENS TYPES: TWIN
  • Oil-free vacuum
  • TEM point resolution: 0.27 nm
  • Information limit: 0.14 nm (measured)
  • STEM resolution: 0.24 nm
  • 1 brightfield and 2 darkfield detectors +1 HAADF detector
  • Tomography +- 70° (possibly up to +- 80°)

With this TEM all classical contrast methods are possible: bright field and dark field, diffraction contrast (including weak beam), parallel illumination at all magnifications (especially important for the examination of crystalline samples), TEM and STEM (scanning TEM). Large tilting angles are possible. A special feature of the TEM in the LNQE is the possibility of tomography.

CONTACT THE TECHNOLOGY

Dr. Fritz Schulze-Wischeler
Management
Address
Schneiderberg 39
30167 Hannover
Building
Room
006
Dr. Fritz Schulze-Wischeler
Management
Address
Schneiderberg 39
30167 Hannover
Building
Room
006
Dipl.-Ing. Oliver Kerker
Address
Schneiderberg 39
30167 Hannover
Building
Room
007
Address
Schneiderberg 39
30167 Hannover
Building
Room
007