TECHNOLOGY IN THE LNQE RESEARCH BUILDING

• The cleanroom has an ISO 5 cleanroom class.
• Mask Aligner for round wafers (silicon and germanium) up to 100 mm diameter. Mask size 150*150 mm2 square, minimum line width 900 nm (SÜSS MA 150 and MA 6)
• UV manual exposure for fragments and small wafers
• Spin coater with heating plate for round wafers up to 200 mm diameter. Heating up to 200°C (SÜSS DELTA 80 and LABSPIN 8 )
• Spraycoater AS8
• Drying oven for vapour deposition on adhesion promoters
• Hotplate HP8TT
• HMDS Hotplate VP8 T/BM
• Plasma Asher for round wafers up to 100 mm diameter, for removing resist residues in O2 plasma (TEPLA 100 and GIGAbatch 360M )
• Wet benches for ultrasonic development and  resist removal
• Refrigerators for resist chemistry

• The cleanroom has an ISO 5 cleanroom class. Gold is allowed here.
• Mask Aligner – Süss MicroTec MA6 Gen4 (SÜSS MA6)
  • UV soft-, hard- and vacuum-contact-exposure
  • Backside and Topside Alignment
  • G, H and I line individually and as mixed light up to 400 Watt
  • Substrate 1‘ to 150 mm diameter and 2x2’ to 6x6’ Semi-Square
  • Mask sizes 5x5‘ and 7x7’ with cut-out for 100mm wafers and 3.5x3.5‘ to 5x5’ with cut-out for 3’ wafers
  • Minimum line width <900 nm
• Spin coater with heating plate for round wafers up to 100 mm diameter. Heating up to 200°C (SÜSS LABSPIN 6)
• Wet benches for development and resist removal 

The Pioneer Two system in the LNQE research building is a hybrid system for electron beam lithography and scanning electron microscopy (EBL-SEM).  It has a maximum acceleration voltage of 30 kV and uses as an electron emitter a thermal field emission (TFE) Schottky-source. The most important parameters are:

• System type: Pioneer Two from Raith
• Beam current: 5pA – 20 nA, beam size: < 1,6 nm
• Inlens detector, dual-detector for secondary and backscattered electrons
• EDX–detector (Bruker QUANTAX 200) for elements between Z=5 and Z=95
• Nanolithography resolution: 8 nm
• Pattern generator speed: 6 MHz
• Field stitching und overlayer accuracy: 50 nm
• Stage travel range: 50 x 50 x 25 mm
• Stage with 360° rotation und 0 – 90°tilt

Use:

• Terms of Use ESL-REM
• Contakt: Mr. Chenxi Ma (Group Ding), c.ma@fkp.uni-hannover.de, +49 511 762 14448

• Jeol JSM-5900 SEM
• E-Beam writing with Raith Elphy plus

Wet benches for wet-chemical structuring and cleaning of round wafers up to 200 mm diameter (also solar)

Reactive ion etching for round wafers up to 100 mm diameter, etching under Ar, O2, SF6 and CHF3 (ALCATEL RIE)

Ion implanter for round wafers up to 300 mm diameter, also Solar, As, P, B, 5-60 keV (VARIAN VIISta HC)

Plasma-CVD for round wafers up to 100 mm diameter, production of oxides, nitrides, poly and germanium, substrate temperature up to 400 °C (OXFORD PLASMALAB 90)

HHV Thin Film Deposition System ATS 500 - Evaporation

• Telemark multi pocket electron beam evaporation source
• 6 crucibles of 7 cc volume each (used with 4cc liners)
• 270° beam deflection
• 6kW power rating
• X-Y beam sweep coils
• Plug-in emitter assembly
• Ultimate vacuum < 2 x 10-7 mbar
• Sample holder up to 6” wafer
• 360° sample rotation, variable rotation speeds in the range 20 to 60 RPM
• Quartz lamp substrate heater up to 250 °C
• Film thickness measurement via quartz crystal sensor
• Evaporation materials (for the moment): Au, Ti, Cr, Ni, Ge, SiO2

Usage: Ankita Choudhary, (Group Zopf), ankita.choudhary@fkp.uni-hannover.de

Evaporation coating system  for round wafers up to 100 mm diameter, 4-fold crucible and single crucible, co-evaporation (BALZERS BAK 610)

HHV Thin Film Deposition System ATS 500 - Sputtering

• DC and RF magnetron sputtering
• up to 1.5 kW DC power
• up to 600 W RF power at 13.56 MHz
• Four target holders
• With load lock chamber
• Max. four inch substrates -rotating workpiece holder (0 to 60 rpm)
• Workpiece holder with "flip" mechanism -Manual and automatic process mode
• Process gases: argon, nitrogen, oxygen -Substrate heating up to 700 °C
• Glow discharge cleaning of the substrate before process possible

Usage: Jacob Stupp (Group C. Ospelkaus), stupp@iqo.uni-hannover.de, +49 511 762 16055

LEYBOLD Z590

• DC and RF magnetron sputtering with up to 5kW DC power with up to 2.5kW RF power
• Four target holders, loading via load lock chamber
• Max. 200mm substrates rotating under the targets with homogeneity baffles
• Manual and automatic process mode
• Process gases: argon, nitrogen, oxygen
• Substrate heating up to 700 °C
• Plasma etching up to 2.5kW
• Liquid nitrogen cooling trap

Resistance evaporator "Congo Vac" for vapour deposition of wafers and small pieces with gold, titanium, and other metals (chromium, germanium, silver, aluminium, nickel, lead, indium, palladium, niobium, hafnium, copper)

Usage: Jacob Stupp (Group C. Ospelkaus), stupp@iqo.uni-hannover.de, +49 511 762 16055

Rapid thermal processing at normal pressure, for round wafers up to 150 mm diameter, also solar, tempering up to 1100 °C under Ar, O2, N2 or N2H2. (AST SHS 2000 and self-made)

Bis 100 mm Durchmesser, Tempern unter Ar, N2 oder im Feinvakuum, bis 950 °C, rezeptgesteuert.

LightFab 3D Printer M with IR Laser 1030 nm

• Subtractive manufacturing of glass substrates using selective laser-induced etching (SLE).
• Two-step process:
  1. Illumination of the substrate using fs laser to increase the local etchability of the material (LightFab 3D Printer).
  2. Removal of the illuminated structures using KOH solution in an ultrasonic bath.
• Machinable materials: including fused silica, sapphire, borosilicate glass, aluminosilicate glass, quartz, diamond.
• 3D structures up to a precision of ~1 µm possible.
• Suitable for substrates up to 200 mm in diameter. Material height or structure depth is material dependent.
• The system can additionally and in combination realize laser welding, laser ablation and 2-photon polymerization.

Usage:

• Contact: Jacob Stupp (C. Ospelkaus Group), stupp@iqo.uni-hannover.de, +49 511 762 16055

Tresky T-4909-AE Die Bonder

•     XY movement (placement stage): 180mm x 180mm (manual)
•     Z-movement: 95mm (manual)
•     Spindle rotation: 360° (unlimited)
•     Binding force: 20g - 1000g
•     Placement accuracy: ±10µm (depending on operator/process)
•     Flip chip placement accuracy: ±5µm (optional, depending on operator/process)

The spectral ellipsometer is characterised by simple operation, measuring speed and combined data analysis of ellipsometric measurements at different angles of incidence (40-90°). It measures in the spectral range from 250 nm to 800 nm. The spectral range of the Sentech SE800 in combination with the SpectraRay/4 software makes it easy to determine, for example, the thickness and refractive index of individual layers through to complex layer stacks. Ready-to-use application files make operation very easy, even for beginners. The ellipsometer supports computer-controlled mapping for homogeneity measurements of samples up to 200 mm in diameter. Both extremely thin layers of 1 nm and - with sufficient transparency - thick layers of up to 15 μm can be measured.

Wafer probe station for round wafers up to 200 mm diameter (also solar), -65 °C to +200 °C sample temperature, digital camera system, 4 measuring needles (CASCADE SUMMIT 11000). With Impedance Analyzer (Agilent 4294A) and Semiconductor Parameter Analyzer (HP 4155).

Four-point measuring station for measuring the layer resistance of a wafer (max. 200 mm diameter, all shapes) according to the measuring principle of four-point measurement. It can be measured manually at selected points on the wafer, or automatically according to a defined pattern and distance.

Confocal microscope with Mirau interferometer, up to 1500x magnification, height resolution up to 1 nm (LEICA DCM 3D)

Digital microscopes (Keyence VHX 7000N)  

• 4K CMOS camera
• Motorised stage for XYZ directions
• Tilt angle +60°to -90°, whereby the object remains in the centre
• Objectives in the motorised turret:
  • 20-100x, lateral 4µm, Z 6µm resolution limit
  • 100-500x, lateral 1.2µm, Z 1.5µm resolution limit
  • 500-2500x, lateral 0.25µm, Z 0.4µm resolution limit

Digital Holographic Microscope (LyncéeTec DHM-R2104)

• Reflection DHM
• Resolution down to the nanometre range
• Measurement of dynamic processes up to 25 MHz
• High speed camera
• Stroboscopic module
• Vacuum option
• 2 laser sources
• Precision sample stage
• Multiple objectives
• Comprehensive software (capture + analysis)

Usage: Ioannis Lampouras (Group Körner), lampouras@geml.uni-hannover.de

Tactile Profilometer (Bruker DektakXT-A)

• Tactile measurements of step height, layer thickness, depth of structures incorporated into substrates, and surface finish characterization.
• Measurement range 1,000 μm down to 10 nanometers with accuracy down to 0.4 nanometers.
• 3D mapping on a motorized stage with rotatable 200 mm vacuum chuck.

Usage: Jacob Stupp (Group C. Ospelkaus), stupp@iqo.uni-hannover.de, +49 511 762 16055

X-ray photoelectron spectroscope (XPS) for non-destructive determination of chemical composition, primarily of solids or their surfaces.

Equipment features:

• PHI Versaprobe III Scanning ESCA
• Heatable and coolable sample chamber
• UPS option
• LEIPS Option
• Scanning Auger Option
• Gas Cluster Ion Source

Usage:

• XPS usage regulations (GE)
• Contact: Dr. Andreas Schaate (andreas.schaate@acb.uni-hannover.de, +49 511 762 3698)