Research CentreMembers
Prof. Dr. Karl Hofmann

Prof. Dr. Karl Hofmann

Prof. Dr. Karl Hofmann
Retired Professors

Emeritus of the LNQE

Core competencies

  • MOSFETs with high-mobility heteroepitaxial germanium channels on silicon substrates
  • Resonant-tunneling devices
  • Nanocluster MOS-memories
  • Gate dielectrics with high dielectric constant
  • Degradation phenomena in gate- and tunnel-oxides
  • Full-band Monte-Carlo transport simulation